Innoscience Technology, a company founded to create a global energy ecosystem based on high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, has opened a new office in Gwangmyeong, near Seoul, Korea, to provide technical and marketing services to the country’s massive consumer and automotive market. Innoscience Korea will also design new and innovative solutions tailored to the Korean’s market needs and based on InnoGaN technology.
The office is headed by Mr. KE Hong, Vice President and General Manager of Innoscience Korea, who is fully responsible for business development in Korea. Mr Hong has 27 years’ experience in the power semiconductor industry, holding key roles at other international and Korean companies.
Mr. Jay Son, CEO of Innoscience, comments: “As we expand Innoscience’s global presence, it is vital to have a direct presence in Korea, which is a very strategic market for Innoscience. We welcome KE Hong and the team and will benefit from his rich professional knowledge, practical experience and forward-looking management.”
The team in Korea is already formed by nine highly skilled engineers and it is quickly expanding with the addition of designers, sales and product marketing experts.
Adds Hong: “Innoscience has shaken up the GaN market by making products readily available at competitive prices. Innoscience is perfectly positioned to provide GaN power devices in mass volume, which is what we think the Korean market was waiting for. Korea is a significant opportunity for Innoscience. We are working hard to support all our customers here and to showcase the benefit of using InnoGaN in relevant applications.”
Innoscience is an Integrated Device Manufacturer (IDM) founded in December 2015 with main investment from CMBI, ARM, SK and CATL. With the development of new technologies, the electric power grid and power electronic systems across the world are undergoing a massive transformation. Our vision is to create an energy ecosystem with the most effective and low-cost Gallium-Nitride-on-Silicon (GaN-on-Si) power solutions. In November 2017, Innoscience first established a mass production 8-inch wafer line for GaN-on-Si devices in Zhuhai. In order to fulfill the rapidly growing power demands, Innoscience has inaugurated a new facility in the Suzhou in September 2020. As a cutting-edge GaN technology provider, Innoscience’s 1,400+ employees and over 300 R&D experts are dedicated to delivering high performance and high reliability GaN power devices that can be widely used in diverse applications including cloud computing, electric vehicles (EV) and automotive, portable devices, mobile phones, chargers and adapters. For more information, please visit www.innoscience.com.